BPW34 Photo Diode
- Type: Silicon PIN Photodiode
- Wavelength Sensitivity: 400 nm – 1100 nm
- Peak Sensitivity: ~900 nm (near-infrared)
- Active Area: ~7.5 mm²
- Reverse Voltage (VR): 60V max
- Dark Current: Typically 2nA (at 10V reverse bias)
- Capacitance: ~10 pF (at 0V), ~4.5 pF (at 10V)
- Rise/Fall Time: ~20 ns (for fast response)
| Make: Vishay |
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