PD638C Photo Sensor

• Fast Response Times – Ensures quick detection of light signals.
• High Photo Sensitivity – Capable of detecting low-intensity light.
• Small Junction Capacitance – Enhances performance in high-frequency applications.
• RoHS Compliance – Environmentally friendly and free from hazardous substances.

Specifications:

• Spectral Bandwidth (λ0.5): 400 nm to 1100 nm
• Peak Sensitivity Wavelength (λp): 940 nm
• Open-Circuit Voltage (VOC): Typically 0.35 V at Ee=5mW/cm², λp=940nm
• Short-Circuit Current (ISC): Typically 18 µA at Ee=1mW/cm², λp=940nm
• Reverse Light Current (IL): 10.2 to 18 µA at Ee=1mW/cm², λp=940nm, VR=5V
• Dark Current (Id): 5 to 30 nA at Ee=0mW/cm², VR=10V
• Reverse Breakdown Voltage (BVR): 32 to 170 V at Ee=0mW/cm², IR=100µA
• Total Capacitance (Ct): Approximately 25 pF at Ee=0mW/cm², VR=3V, f=1MHz
• Rise/Fall Time (tr/tf): Typically 50 ns at VR=10V, RL=1kΩ

Absolute Maximum Ratings (at 25°C):

• Reverse Voltage (VR): 32 V
• Power Dissipation (Pd): 150 mW
• Operating Temperature (Topr): -40°C to +85°C
• Storage Temperature (Tstg): -40°C to +85°C
• Lead Soldering Temperature (Tsol): 260°C (for ≤5 seconds)